dmn63d8lv document number: ds36022 rev. 2 - 2 1 of 6 www.diodes.com august 2012 ? diodes incorporated dmn63d8l v new product dual n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 30v 4.2? @ v gs = 5v 200ma 2.8? @ v gs = 10v 260ma description this new generation mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? battery operated systems and solid-state relays ? drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc features ? dual n-channel mosfet ? low on-resistance ? low input capacitance ? fast switching speed ? small surface mount package ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot563 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmn63d8lv -7 sot563 3,000/tape & reel dmn63d8lv -13 sot563 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot563 top view top view internal schematic s 1 d 1 d 2 s 2 g 1 g 2 3d8 = product type marking code ym = date code marking y = year (ex: z = 2012) m = month (ex: 9 = september) esd protected
dmn63d8lv document number: ds36022 rev. 2 - 2 2 of 6 www.diodes.com august 2012 ? diodes incorporated dmn63d8l v new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs =10v steady state t a = 25c t a = 70c i d 260 200 ma continuous drain current (note 5) v gs = 5v steady state t a = 25c t a = 70c i d 220 160 ma pulsed drain current (10 s pulse, duty cycle = 1%) i dm 800 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 450 mw thermal resistance, junction to ambient (note 5) r ja 281 c/w operating and storage temperature range t j, t stg -55 to 150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1.0 a v ds = 30v, v gs = 0v gate-body leakage i gss ? ? 10.0 a v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.8 ? 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? 2.8 v gs = 10.0v, i d = 250ma ? ? 3.8 v gs = 5.0v, i d = 250ma ? ? 4.2 v gs = 4.5v, i d = 250ma ? ? 4.5 v gs = 4.0v, i d = 250ma ? ? 13 v gs = 2.5v, i d = 10ma forward transconductance g fs 80 ? ? ms v ds = 10v, i d = 0.115a diode forward voltage v sd - 0.8 1.2 v v gs = 0v, i s = 115ma dynamic characteristics (note 7) input capacitance c iss ? 22.0 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 3.2 ? reverse transfer capacitance c rss ? 2.0 ? gate resistance r g ? 79.9 ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge v gs = 10v q g ? 0.87 ? nc v gs = 10v, v ds = 30v, i d = 150ma total gate charge v gs = 4.5v q g ? 0.43 ? gate-source charge q g s ? 0.11 ? gate-drain charge q g d ? 0.11 ? turn-on delay time t d ( on ) ? 3.3 ? ns v dd = 30v, i d = 0.115a, v gen = 10v , r gen = 25 turn-on rise time t r ? 3.2 ? turn-off delay time t d ( off ) ? 12.0 ? turn-off fall time t f ? 6.3 ? notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6 .short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing.
dmn63d8lv document number: ds36022 rev. 2 - 2 3 of 6 www.diodes.com august 2012 ? diodes incorporated dmn63d8l v new product 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 01 2 345 v , drain-source voltage (v) figure 1 typical output characteristic ds i, d r ain c u r r en t (a) d v= 2.0v gs v= 2.5v gs v= 3.0v gs v= 4.0v gs v= 4.5v gs v = 10.0v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 01 2 3 45 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ai n c u r r e n t (a) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v = 2.5v gs v = 4.5v gs v = 10v gs 1.5 2.5 3.5 4.5 0 5 10 15 20 1.0 2.0 3.0 4.0 5.0 v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i = 250ma d i = 100ma d i= 10ma d 0 2 4 6 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v = 4.0v i = 200ma gs d v= v i = 300ma gs d 5.0
dmn63d8lv document number: ds36022 rev. 2 - 2 4 of 6 www.diodes.com august 2012 ? diodes incorporated dmn63d8l v new product 1.5 2.5 3.5 4.5 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 1.0 2.0 3.0 4.0 5.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j v = 4.0v i = 200ma gs d v= v i = 300ma gs d 5.0 0.6 0.8 1.2 1.4 1.6 1.8 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 1.0 2.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j i= 1ma d i = 250a d i , source current (a) s 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current t= 25c a t = -55c a t= 85c a t = 125c a t = 150c a
dmn63d8lv document number: ds36022 rev. 2 - 2 5 of 6 www.diodes.com august 2012 ? diodes incorporated dmn63d8l v new product package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dmn63d8lv document number: ds36022 rev. 2 - 2 6 of 6 www.diodes.com august 2012 ? diodes incorporated dmn63d8l v new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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